Lee, E.-S. Park, J.-K. Lee, W.-S. Seong, T.-Y. Baik, Y.-J. 2024-01-20T13:34:44Z 2024-01-20T13:34:44Z 2021-08-31 2012-11 1229-7801 https://pubs.kist.re.kr/handle/201004/128751 The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - N2 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at 250°C as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested. Korean BN films Chamber walls Cubic boron nitride (cBN) Deposition chambers Deposition pressures Duration time Electric power Evacuation time Hexagonal boron nitride (h-BN) High-frequency power Initial stages Mixed gas Moisture level Plasma treatment Pre-deposition Radio frequencies Si wafer Substrate holders Unbalanced magnetron sputtering Vacuum chambers Absorption Boron nitride Cubic boron nitride Heat treatment Heating Moisture Plasma applications Silicon wafers Substrates Thin films Vapor deposition Water Water absorption Deposition Effect of moisture in a vacuum chamber on the deposition of c-BN thin film using an unbalanced magnetron sputtering method Article 10.4191/kcers.2012.49.6.620 1 Journal of the Korean Ceramic Society, v.49, no.6, pp.620 - 624 Journal of the Korean Ceramic Society 49 6 620 624 scopus kci ART001714146 2-s2.0-84872026343 Article BN films Chamber walls Cubic boron nitride (cBN) Deposition chambers Deposition pressures Duration time Electric power Evacuation time Hexagonal boron nitride (h-BN) High-frequency power Initial stages Mixed gas Moisture level Plasma treatment Pre-deposition Radio frequencies Si wafer Substrate holders Unbalanced magnetron sputtering Vacuum chambers Absorption Boron nitride Cubic boron nitride Heat treatment Heating Moisture Plasma applications Silicon wafers Substrates Thin films Vapor deposition Water Water absorption Deposition Absorption Boron nitride Heat treatment Thin films Water