Kim, Kwang-Chon Baek, Seung Hyub Kim, Hyun Jae Song, Jin Dong Kim, Jin-Sang 2024-01-20T14:00:55Z 2024-01-20T14:00:55Z 2021-09-05 2012-10 0361-5235 https://pubs.kist.re.kr/handle/201004/128807 Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metalorganic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects. English SPRINGER MOLECULAR-BEAM EPITAXY GROWTH CDTE SI(111) A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy Article 10.1007/s11664-012-1991-z 1 JOURNAL OF ELECTRONIC MATERIALS, v.41, no.10, pp.2795 - 2798 JOURNAL OF ELECTRONIC MATERIALS 41 10 2795 2798 scie scopus 000308655500021 2-s2.0-84868552048 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Proceedings Paper MOLECULAR-BEAM EPITAXY GROWTH CDTE SI(111) CdTe MOCVD GPA strain mapping