Cho, Hyunjin Lee, Changhyup Oh, In Seoup Park, Sungchan Kim, Hwan Chul Kim, Myung Jong 2024-01-20T14:01:29Z 2024-01-20T14:01:29Z 2021-09-04 2012-10 1976-4251 https://pubs.kist.re.kr/handle/201004/128836 Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films. English SPRINGER SINGLE COPPER FILMS GRAPHITE Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene Article 10.5714/CL.2012.13.4.205 2 CARBON LETTERS, v.13, no.4, pp.205 - 211 CARBON LETTERS 13 4 205 211 kci ART001706764 000209126000002 Chemistry, Multidisciplinary Materials Science, Multidisciplinary Chemistry Materials Science Article SINGLE COPPER FILMS GRAPHITE graphene synthesis methanol low pressure chemical vapor deposition large area