Cheong, Byung-ki Lee, Suyoun Jeong, Jeung-hyun Park, Sohee Han, Seungwu Wu, Zhe Ahn, Dong-Ho 2024-01-20T14:01:47Z 2024-01-20T14:01:47Z 2021-09-04 2012-10 0370-1972 https://pubs.kist.re.kr/handle/201004/128852 Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memory material. In respects of high-speed and high-scalability memory characteristics, d-phase Ge-doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteristics of these materials is presented primarily based on our recent experimental and computational studies and with a particular regard to their Sb-to-Te ratio (STR) dependence. TEM images of the d-phase GeST microstructures of varying STR and a highly scaled PCM cell with a d-phase GeST of high STR. English WILEY-V C H VERLAG GMBH TE GROWTH FILMS PRAM Fast and scalable memory characteristics of Ge-doped SbTe phase change materials Article 10.1002/pssb.201200419 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.249, no.10, pp.1985 - 1991 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 249 10 1985 1991 scie scopus 000309597300029 2-s2.0-84867206946 Physics, Condensed Matter Physics Article TE GROWTH FILMS PRAM Ge-doped SbTe phase change memory scalability SET speed storage class memory