Choi, T. Jiang, L. Lee, S. Egami, T. Lee, H. N. 2024-01-20T14:01:55Z 2024-01-20T14:01:55Z 2021-09-05 2012-09-28 1367-2630 https://pubs.kist.re.kr/handle/201004/128858 Polar oxide-based heterostructures composed of ferroelectric PbZr0.2Ti0.8O3 and hole-doped La0.8Sr0.2MnO3 ultrathin epitaxial films were fabricated on Nb : SrTiO3 substrates to check the viability of all oxide-based photovoltaic (PV) nano-junctions. We observed clear diode-like behavior, yielding a rectification ratio up to similar to 1000. This large enhancement could be attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly contributed to the improved PV performance by promoting carrier separation, as compared with oxide junctions without the ferroelectric layer. Therefore, our results provide useful information for developing highly efficient ferroelectric oxide-based PV devices. English IOP PUBLISHING LTD HETEROSTRUCTURES CURRENTS High rectification and photovoltaic effect in oxide nano-junctions Article 10.1088/1367-2630/14/9/093056 1 NEW JOURNAL OF PHYSICS, v.14 NEW JOURNAL OF PHYSICS 14 scie scopus 000309393500002 2-s2.0-84868020138 Physics, Multidisciplinary Physics Article HETEROSTRUCTURES CURRENTS