Lee, Sang Hyeon Kim, Moonkyung Cheong, Byung-Ki Lee, Jo-Won Tiwari, Sandip 2024-01-20T14:03:00Z 2024-01-20T14:03:00Z 2021-09-05 2012-09 0741-3106 https://pubs.kist.re.kr/handle/201004/128914 Ge2Sb2Te5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformation. With GST as a floating gate, hysteretic behavior that is opposite of that arising from charge trapping and consistent with ferroelectric phase transition is characterized. Saturating memory window of similar to 1 V under +/-4 V cycling and retention times of hundreds of seconds constrained by depolarization are observed. Extracted remnant polarization is similar to 0.13 mu C/cm(2). The result suggests potential for embedded use with the advantages of a retention time that is competitive or better than DRAMs, a single-element transistorlike structure and technologically easy integration. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory Article 10.1109/LED.2012.2204721 1 IEEE ELECTRON DEVICE LETTERS, v.33, no.9, pp.1231 - 1233 IEEE ELECTRON DEVICE LETTERS 33 9 1231 1233 scie scopus 000308021800005 2-s2.0-84865442239 Engineering, Electrical & Electronic Engineering Article Depolarization field DRAM ferroelectric Ge2Sb2Te5 (GST) memory polarization single element