Do, Young Ho Kang, Min Gyu Kim, Jin Sang Kang, Chong Yun Yoon, Seok Jin 2024-01-20T14:03:08Z 2024-01-20T14:03:08Z 2021-09-05 2012-09 0924-4247 https://pubs.kist.re.kr/handle/201004/128922 The ferroelectric properties of flexible devices based on 0.05Pb(Al0.5Nb0.5)O-3-0.95Pb(Zr0.52Ti0.48)O-3 + 0.7 wt.%Nb2O5 + 0.5 wt.%MnO2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices. (C) 2012 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TRANSPARENT TRANSISTORS SEMICONDUCTORS ELECTRONICS TFT Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process Article 10.1016/j.sna.2012.06.012 1 SENSORS AND ACTUATORS A-PHYSICAL, v.184, pp.124 - 127 SENSORS AND ACTUATORS A-PHYSICAL 184 124 127 scie scopus 000308452200018 2-s2.0-84864703912 Engineering, Electrical & Electronic Instruments & Instrumentation Engineering Instruments & Instrumentation Article TRANSPARENT TRANSISTORS SEMICONDUCTORS ELECTRONICS TFT Films process Ferroelectric properties PZT Functional applications Laser lift-off