Oh, Eunsoon Lee, B. W. Kim, T. S. Lee, Jae-Min Oh, S. -J. Song, Jin Dong 2024-01-20T14:03:37Z 2024-01-20T14:03:37Z 2021-09-04 2012-09 1567-1739 https://pubs.kist.re.kr/handle/201004/128947 We fabricated GaAs-based spin-LED (light emitting diode) structures using half-metallic Fe3O4 as spin injectors and measured the circular polarization of the electroluminescence (EL). The circular polarization of the EL due to the spin injection was improved by the low temperature growth of the ferromagnetic layer, compared to the room temperature growth. We also studied the excitation wavelength dependence of the photoluminescence (PL) spectra and the variation of the EL spectra with increasing current. The excess carrier dependence of the EL peaks was found to be different from that of the PL peaks, which was explained by the carrier injection into the buffer layer. (C) 2012 Elsevier B.V. All rights reserved. English ELSEVIER EFFICIENCY Optical characterizations of GaAs-based spin light emitting diodes using Fe3O4 spin injectors Article 10.1016/j.cap.2012.02.041 1 CURRENT APPLIED PHYSICS, v.12, no.5, pp.1244 - 1247 CURRENT APPLIED PHYSICS 12 5 1244 1247 scie scopus kci ART001695590 000304360000003 2-s2.0-84861575781 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article EFFICIENCY Spin light emitting diodes Half metal Electroluminescence Photoluminescence