Lim, Ju Young Song, Jin Dong Yang, Hae Suk 2024-01-20T14:03:56Z 2024-01-20T14:03:56Z 2021-09-05 2012-08-31 0040-6090 https://pubs.kist.re.kr/handle/201004/128962 In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of similar to 0.5 mu m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-mu m-thick InSb layer, grown at the substrate temperature of 400 degrees C and under the Sb flux of 1.5x10(-6) Torr, shows the electron mobility as high as 67,890 cm(2)/Vs. (C) 2012 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA MOLECULAR-BEAM EPITAXY HIGH-QUALITY INSB SUBSTRATE MAGNETORESISTANCE PHOTODETECTORS SEMICONDUCTORS SENSORS Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs Article 10.1016/j.tsf.2012.06.077 1 THIN SOLID FILMS, v.520, no.21, pp.6589 - 6594 THIN SOLID FILMS 520 21 6589 6594 scie scopus 000307286100027 2-s2.0-84864752630 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article MOLECULAR-BEAM EPITAXY HIGH-QUALITY INSB SUBSTRATE MAGNETORESISTANCE PHOTODETECTORS SEMICONDUCTORS SENSORS Defects Interfaces Nanostructures Molecular beam epitaxy InSb Hall devices Raman