Debnath, Pulak Chandra Lee, Sang Yeol 2024-01-20T14:04:00Z 2024-01-20T14:04:00Z 2022-01-10 2012-08-27 0003-6951 https://pubs.kist.re.kr/handle/201004/128964 A high-performance n-channel metal-oxide-semiconductor inverter implemented consisting of enhancement mode driving thin-film transistor with amorphous Ga-In-Zn-O (a-GIZO) and depletion mode load with amorphous Si-In-Zn-O (a-SIZO) is demonstrated. The threshold voltage of the post-annealed a-SIZO load thin film transistor (TFT) exhibits negative value while the threshold voltage of the GIZO driving TFT exhibits positive value. The proposed inverter composed of a-SIZO and a-GIZO TFT shows much improved switching characteristics with higher voltage gain. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747800] English AMER INST PHYSICS OXIDE SEMICONDUCTORS TRANSPARENT DISPLAY PANEL LOAD TFT Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors Article 10.1063/1.4747800 1 APPLIED PHYSICS LETTERS, v.101, no.9 APPLIED PHYSICS LETTERS 101 9 scie scopus 000308408100031 2-s2.0-84865846482 Physics, Applied Physics Article OXIDE SEMICONDUCTORS TRANSPARENT DISPLAY PANEL LOAD TFT