Jansen, R. Dash, S. P. Sharma, S. Min, B. C. 2024-01-20T14:30:30Z 2024-01-20T14:30:30Z 2021-09-04 2012-08 0268-1242 https://pubs.kist.re.kr/handle/201004/129041 In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. English IOP PUBLISHING LTD Silicon spintronics with ferromagnetic tunnel devices Article 10.1088/0268-1242/27/8/083001 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.27, no.8 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27 8 scie scopus 000306331100003 2-s2.0-84863734358 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Review ELECTRICAL SPIN-INJECTION CONDUCTION RESONANCE METAL MAGNETORESISTANCE TRANSISTOR TRANSPORT SEMICONDUCTORS ACCUMULATION POLARIZATION