Choi, S.Y. Yang, M.K. Lee, J.-K. 2024-01-20T14:30:37Z 2024-01-20T14:30:37Z 2021-08-31 2012-08 1225-0562 https://pubs.kist.re.kr/handle/201004/129046 Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using MnO x thin films. The V set of the as-grown MnO x film ranged from 1 to 6.2V, whereas the V set of the oxygen-annealed film ranged from 2.3 to 3V. An excess of oxygen in an MnOx film leads to an increase in Mn 4+ content at the MnOx film surface with a subsequent change in the Mn 4+/Mn 3+ ratio at the surface. This was attributed to the change in Mn 4+/Mn 3+ ratios at the MnO x surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of MnO x thin films. In addition, crystalline MnO x can help stabilize the Vset and Vreset distribution in memory switching in a Ti/MnOx/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and MnO x. English As-grown Crystallinities Effect of oxygen Film surfaces Memory switching MnOx Oxygen annealing Resistive memories Resistive switching Set voltage Switching voltages Voltage distribution Annealing Grain growth Manganese Oxygen Platinum Redox reactions Switching systems Thin films Voltage distribution measurement Voltage dividers Manganese oxide Effect of oxygen annealing on the set voltage distribution Ti/MnO 2/Pt resistive switching devices Article 10.3740/MRSK.2012.22.8.385 1 Korean Journal of Materials Research, v.22, no.8, pp.385 - 389 Korean Journal of Materials Research 22 8 385 389 scopus kci 2-s2.0-84867299992 Article Manganese Oxygen Platinum Redox reactions Switching systems Thin films Voltage distribution measurement Voltage dividers Manganese oxide As-grown Crystallinities Effect of oxygen Film surfaces Memory switching MnOx Oxygen annealing Resistive memories Resistive switching Set voltage Switching voltages Voltage distribution Annealing Grain growth MnOx Oxygen annealing Resistive switching Voltage distribution