Kang, Tae Dong Sim, Kyung Ik Kim, Jae Hoon Wu, Zhe Cheong, Byung-ki Lee, Hosun 2024-01-20T14:30:39Z 2024-01-20T14:30:39Z 2021-09-05 2012-07-31 0040-6090 https://pubs.kist.re.kr/handle/201004/129048 We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration and mobility, we estimated the effective mass of holes for the Ge-SbTe thin films. (C) 2012 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA OPTICAL-PROPERTIES FILMS GAP Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys Article 10.1016/j.tsf.2012.05.030 1 THIN SOLID FILMS, v.520, no.19, pp.6221 - 6225 THIN SOLID FILMS 520 19 6221 6225 scie scopus 000306104900030 2-s2.0-84863575969 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article OPTICAL-PROPERTIES FILMS GAP Phase change random access memory Germanium Doped antimony telluride Dielectric function Band gap Effective mass Sputtering