Mane, Rajaram S. Shinde, Dipak V. Yoon, Seog Joon Ambade, Swapnil B. Lee, Joong Kee Han, Sung-Hwan 2024-01-20T14:30:55Z 2024-01-20T14:30:55Z 2021-09-05 2012-07-16 0003-6951 https://pubs.kist.re.kr/handle/201004/129060 Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737865] English AMER INST PHYSICS SENSITIZED SOLAR-CELLS NANOWIRE ARRAYS PHOTOSENSITIZATION NANOPARTICLES GROWTH FILMS CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells Article 10.1063/1.4737865 1 APPLIED PHYSICS LETTERS, v.101, no.3 APPLIED PHYSICS LETTERS 101 3 scie scopus 000306748000090 2-s2.0-84864246490 Physics, Applied Physics Article SENSITIZED SOLAR-CELLS NANOWIRE ARRAYS PHOTOSENSITIZATION NANOPARTICLES GROWTH FILMS photoelectrochemical cells ZnO-CdSe CdS buffer-layer CdSe nanoparticles