정근 이진주 최원국 윤석진 최지원 2024-01-20T14:31:23Z 2024-01-20T14:31:23Z 2022-01-10 2012-07 1225-5475 https://pubs.kist.re.kr/handle/201004/129081 Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and 250 °C were explored to find excellent electrical and optical properties. The AZO thin film deposited at 100 °C had the lowest resistivity, 9 10-4 cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO. 한국센서학회 Effect of Substrate Temperature on Electrical and Optical Properties of Al Doped ZnO Thin Films by Continuous Composition Spread Article 2 센서학회지, v.21, no.4, pp.263 - 269 센서학회지 21 4 263 269 N kci ART001683653 Continuous Composition Spread Transparent Conducting Oxides Al Doped ZnO