Abdellatif, M. H. Song, Jin Dong Choi, Won Jun Cho, Nam Ki 2024-01-20T14:31:33Z 2024-01-20T14:31:33Z 2021-09-05 2012-07 1533-4880 https://pubs.kist.re.kr/handle/201004/129088 The Photoluminescence spectra (PL), their temperature and power dependence were investigated for the ground state in InAs quantum dots (QDs) embedded in InGaAs asymmetric quantum well (Asym. QW). In-atom segregation is well known phenomena in such structures, which result in altering the inter-atomic distances; as a consequence the thermo-dynamical parameters change as well, namely Debye temperature. The bigger value of Debye temperature for the studied sample with respect to the corresponding bulk value is attributed to In/Ga inter-diffusion during growth. The inter-diffusion process causes non-radiative defects in the sample. As a consequence, rapid decrease in the QDs integrated emission intensity as the temperature increases was occurred. English AMER SCIENTIFIC PUBLISHERS TEMPERATURE-DEPENDENCE ENERGY-GAP In/Ga Inter-Diffusion in InAs Quantum Dot in InGaAs/GaAs Asymmetric Quantum Well Article 10.1166/jnn.2012.6280 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5774 - 5777 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12 7 5774 5777 scie scopus 000307604700121 2-s2.0-84865112764 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TEMPERATURE-DEPENDENCE ENERGY-GAP Varshni Relation InAs Quantum Dot Asymetric InGaAs/GaAs Quantum Well In/Ga Inter-Diffusion