Kim, S. Y. Song, J. D. Han, I. K. Kim, T. W. 2024-01-20T14:31:34Z 2024-01-20T14:31:34Z 2021-09-05 2012-07 1533-4880 https://pubs.kist.re.kr/handle/201004/129089 InP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions. English AMER SCIENTIFIC PUBLISHERS DIODE-LASERS POWER NM Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions Article 10.1166/jnn.2012.6325 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5519 - 5522 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12 7 5519 5522 scie scopus 000307604700071 2-s2.0-84865129049 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article DIODE-LASERS POWER NM InP/InGaP Quantum Structure Quantum Dash 808-nm MEE MBE