Jung, Eun Sik Cho, Yu Seup Kang, Ey Goo Kim, Yong Tae Sung, Man Young 2024-01-20T14:31:45Z 2024-01-20T14:31:45Z 2021-09-05 2012-07 1975-0102 https://pubs.kist.re.kr/handle/201004/129098 Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on-state voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical. English KOREAN INST ELECTR ENG A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance Article 10.5370/JEET.2012.7.4.601 1 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.7, no.4, pp.601 - 605 JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY 7 4 601 605 scie scopus kci ART001677006 000306050100019 2-s2.0-84863431975 Engineering, Electrical & Electronic Engineering Article IGBTs Floating island On-resistance Breakdown voltage Power device