Jung, Hyung-Suk Jeon, Sang Ho Kim, Hyo Kyeom Yu, Il-Hyuk Lee, Sang Young Lee, Joohwi Chung, Yoon Jang Cho, Deok-Yong Lee, Nae-In Park, Tae Joo Choi, Jung-Hae Han, Seungwu Hwang, Cheol Seong 2024-01-20T14:32:12Z 2024-01-20T14:32:12Z 2021-09-05 2012-07 2162-8769 https://pubs.kist.re.kr/handle/201004/129121 The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO2 films on Ge substrate was investigated. After annealing, the HfO2 films grown at 200 degrees C and 280 degrees C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m-phases (Delta E-tetra) was calculated by first principles calculations. The higher k value of t-HfO2 compared to amorphous and monoclinic HfO2 was experimentally confirmed. (C) 2012 The Electrochemical Society. All rights reserved. English ELECTROCHEMICAL SOC INC TETRAGONAL ZIRCONIA GATE DIELECTRICS HAFNIUM OXIDE THIN-FILMS BEHAVIOR ZRO2 The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate Article 10.1149/2.020202jss 1 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.1, no.2, pp.N33 - N37 ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 1 2 N33 N37 scopus 000319445100005 2-s2.0-84866725508 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TETRAGONAL ZIRCONIA GATE DIELECTRICS HAFNIUM OXIDE THIN-FILMS BEHAVIOR ZRO2 HfO2 Ge Substrate Carbon Concentration