Yim, Ju-Hyuk Park, Hyung-Ho Jang, Ho Won Yoo, Myong-Jae Paik, Dong-Su Baek, Seunghyub Kim, Jin-Sang 2024-01-20T14:33:53Z 2024-01-20T14:33:53Z 2021-09-05 2012-06 0361-5235 https://pubs.kist.re.kr/handle/201004/129200 Indium-selenium-based compounds have received much attention as thermoelectric materials since a high thermoelectric figure of merit of 1.48 at 705 K was observed in In4Se2.35. In this study, four different compositions of indium-selenium compounds, In2Se3, InSe, In4Se3, and In4Se2.35, were prepared by mechanical alloying followed by spark plasma sintering. Their thermoelectric properties such as electrical resistivity, Seebeck coefficient, and thermal conductivity were measured in the temperature range of 300 K to 673 K. All the In-Se compounds comprised nanoscaled structures and exhibited -type conductivity with Seebeck coefficients ranging from -159 V K-1 to -568 V K-1 at room temperature. English SPRINGER Thermoelectric Properties of Indium-Selenium Nanocomposites Prepared by Mechanical Alloying and Spark Plasma Sintering Article 10.1007/s11664-012-1940-x 1 JOURNAL OF ELECTRONIC MATERIALS, v.41, no.6, pp.1354 - 1359 JOURNAL OF ELECTRONIC MATERIALS 41 6 1354 1359 scie scopus 000304205100064 2-s2.0-84862779348 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article Indium selenide thermoelectric mechanical alloying spark plasma sintering