Kim, Hyo-Jung Yim, Ju-Hyuk Choi, Won Chel Park, Chan Kim, Jin-Sang 2024-01-20T14:34:10Z 2024-01-20T14:34:10Z 2021-09-05 2012-06 0361-5235 https://pubs.kist.re.kr/handle/201004/129215 To investigate the effect of annealing in controlled atmosphere on the thermoelectric properties of Bi-Te film, Te-deficient Bi-Te film was deposited by sputtering, and then annealed with various Bi-Te alloy powders with different Te concentrations in a closed system at 250A degrees C for 24 h. Bi-Te phases other than Bi2Te3 in the as-deposited film could be removed when the film was annealed with Bi-Te source powder containing 62 at.% or higher content of Te. At the same time, the values of Seebeck coefficient and carrier concentration of the films approach -105 V/K and 3 x 10(19) cm(-3) to 6 x 10(19) cm(-3), respectively. This result indicates that mass transport of Te to the film takes place, resulting in the formation of Bi2Te3 phase and reduction of the amount of -type carriers due to compositional change of the film from Te-deficient to stoichiometric. Annealing in controlled Te-vapor atmosphere is an effective method to improve the thermoelectric properties of Bi-Te film by changing the composition and phase of Te-deficient film to stoichiometric Bi2Te3 film. English SPRINGER DEPOSITION The Effect of Annealing in Controlled Vapor Pressure on the Thermoelectric Properties of RF-Sputtered Bi2Te3 Film Article 10.1007/s11664-012-1938-4 1 JOURNAL OF ELECTRONIC MATERIALS, v.41, no.6, pp.1519 - 1523 JOURNAL OF ELECTRONIC MATERIALS 41 6 1519 1523 scie scopus 000304205100091 2-s2.0-84862829498 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article DEPOSITION Te vapor pressure annealing bismuth telluride thin film thermoelectric