Shin, Jae Cheol Choi, Kyoung Jin Kim, Do Yang Choi, Won Jun Li, Xiuling 2024-01-20T14:34:31Z 2024-01-20T14:34:31Z 2021-08-31 2012-06 1528-7483 https://pubs.kist.re.kr/handle/201004/129233 Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In(chi)Gal(1-chi)As on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In chi Ga1-chi As NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In chi Ga1-chi As NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis. English American Chemical Society EPITAXY AREA Characteristics of Strain-Induced In(x)Gai(1-x)As Nanowires Grown on Si(111) Substrates Article 10.1021/cg300210h 1 Crystal Growth & Design, v.12, no.6, pp.2994 - 2998 Crystal Growth & Design 12 6 2994 2998 scie scopus 000304838000037 2-s2.0-84861919474 Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary Chemistry Crystallography Materials Science Article EPITAXY AREA