Rha, Sang Ho Jung, Jisim Jung, Yoon Soo Chung, Yoon Jang Kim, Un Ki Hwang, Eun Suk Park, Byoung Keon Park, Tae Joo Choi, Jung-Hae Hwang, Cheol Seong 2024-01-20T14:35:00Z 2024-01-20T14:35:00Z 2021-09-04 2012-05-14 0003-6951 https://pubs.kist.re.kr/handle/201004/129257 In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (<300 degrees C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an I-on/I-off current ratio greater than 10(4) and a threshold voltage of 1.7 V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717621] English AMER INST PHYSICS Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process Article 10.1063/1.4717621 1 APPLIED PHYSICS LETTERS, v.100, no.20 APPLIED PHYSICS LETTERS 100 20 scie scopus 000304265000094 2-s2.0-84861838344 Physics, Applied Physics Article