Jeong, H. Shin, S. H. Kim, S. Y. Song, J. D. Choi, S. B. Lee, D. S. Lee, J. Jho, Y. D. 2024-01-20T15:01:06Z 2024-01-20T15:01:06Z 2021-09-05 2012-05 1567-1739 https://pubs.kist.re.kr/handle/201004/129288 We investigated the thickness-dependent characteristics of THz waves from InAs epilayers whose thickness ranges from 0.01 to 1.74 mu m. The amplitude showed monotonic increments up to 0.9 mu m, followed by a saturation at 1.74 mu m. Interestingly, the phase of THz waves was reversed around absorption depth and used to identify the transient dipole direction based on simulated band diagram. We could further distinguish dominant THz wave generation mechanisms, associated with the phase information. (C) 2011 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE BV TERAHERTZ-EMISSION POLARIZATION RADIATION FIELD Relationship between phase and generation mechanisms of THz waves in InAs Article 10.1016/j.cap.2011.10.002 1 CURRENT APPLIED PHYSICS, v.12, no.3, pp.668 - 672 CURRENT APPLIED PHYSICS 12 3 668 672 scie scopus kci ART001662856 000300715000013 2-s2.0-84857449024 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TERAHERTZ-EMISSION POLARIZATION RADIATION FIELD Terahertz InAs Phase shift Diffusion Photo-Dember effect