Lee, Jong-Han Shin, Sangwon Chae, Keun Hwa Kim, Donghwan Song, Jonghan 2024-01-20T15:01:45Z 2024-01-20T15:01:45Z 2021-09-04 2012-05 1567-1739 https://pubs.kist.re.kr/handle/201004/129316 1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 x 10(17) ions/cm(2) at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 mu(B) per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d(9)) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d(10)) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 degrees C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase. (C) 2012 Published by Elsevier B.V. English ELSEVIER SCIENCE BV DILUTED MAGNETIC SEMICONDUCTORS THIN-FILMS OXIDE Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO Article 10.1016/j.cap.2011.12.013 1 CURRENT APPLIED PHYSICS, v.12, no.3, pp.924 - 927 CURRENT APPLIED PHYSICS 12 3 924 927 scie scopus kci ART001663719 000300715000058 2-s2.0-84857449993 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article DILUTED MAGNETIC SEMICONDUCTORS THIN-FILMS OXIDE Dilute magnetic semiconductor Ferromagnetic Copper implantation ZnO