Jung, Ji Sim Rha, Sang-Ho Kim, Un Ki Chung, Yoon Jang Jung, Yoon Soo Choi, Jung-Hae Hwang, Cheol Seong 2024-01-20T15:02:02Z 2024-01-20T15:02:02Z 2021-09-05 2012-04-30 0003-6951 https://pubs.kist.re.kr/handle/201004/129324 The charge trapping characteristics of 30-nm-thick Si3N4 and 3-nm-thick Al2O3 layers between amorphous In-Ga-Zn-O thin films and 100-nm-thick blocking oxides made of thermal SiO2 were examined. The Si3N4 layer showed several discrete trap levels with relatively low density, while the Al2O3 layer showed a higher trap density with continuous distribution for electron trapping. When no tunneling oxide was adopted, the trapped carriers were easily detrapped, even at room temperature. Adoption of a 6-nm-thick SiO2 tunneling layer grown by atomic layer deposition largely improved the retention of the trapped charges and retained similar to 60% of the trapped charges even after 10 000 s. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711202] English AMER INST PHYSICS ARRAY The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application Article 10.1063/1.4711202 1 APPLIED PHYSICS LETTERS, v.100, no.18 APPLIED PHYSICS LETTERS 100 18 scie scopus 000303598600064 2-s2.0-84862551069 Physics, Applied Physics Article ARRAY a-IGZO charge trap memory application