Joo, Sungjung Jung, K. Y. Lee, B. C. Kim, Tae-Suk Shin, K. H. Jung, Myung-Hwa Rho, K-J. Park, J. -H. Hong, Jinki Rhie, K. 2024-01-20T15:02:05Z 2024-01-20T15:02:05Z 2021-09-04 2012-04-23 0003-6951 https://pubs.kist.re.kr/handle/201004/129325 The ferromagnetic layer in magnetic tunnel junctions (MTJs) was oxidized with varying O-2 concentrations, and the corresponding effect on spin-dependent transport was studied. As expected from our previous results for MTJs with an over-oxidized AlOx tunnel barrier, a partially oxidized ferromagnetic layer plays an important role in spin-dependent transport. As the temperature is lowered, the junction resistance increases dramatically, and the tunneling magnetoresistance (TMR) is strongly suppressed. Increasing the O-2 concentration enhances the increase of resistance and suppression of TMR. This work supports our previous conclusion that oxidizing the ferromagnetic layer generates localized magnetic moments, which act as a scattering center for spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704557] English AMER INST PHYSICS EXCHANGE MODEL ANOMALIES STATES TRANSISTOR DEPENDENCE Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance Article 10.1063/1.4704557 1 APPLIED PHYSICS LETTERS, v.100, no.17 APPLIED PHYSICS LETTERS 100 17 scie scopus 000303340300050 2-s2.0-84860318539 Physics, Applied Physics Article EXCHANGE MODEL ANOMALIES STATES TRANSISTOR DEPENDENCE