Park, Youn Ho Jang, Hyun Cheol Koo, Hyun Cheol Kim, Hyung-jun Chang, Joonyeon Han, Suk Hee Choi, Heon-Jin 2024-01-20T15:02:35Z 2024-01-20T15:02:35Z 2021-09-05 2012-04-01 0021-8979 https://pubs.kist.re.kr/handle/201004/129346 From the Shubnikov-de Haas oscillation, estimation of the spin-orbit interaction parameter is possible only for very low temperature. An alternative method available for much wider temperature range is utilizing the ferromagnetic electrode which contacts the quantum well channel and reads the Fermi level of spin-up and -down subbands. The amount of spin-subband shift is controlled by a gate electric field and finally the spin-orbit interaction induced by Rashba effect is obtained near room temperature. At T = 150 K, a gate voltage shifts the spin subband potential and changes the spin-orbit interaction parameter by 23%. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677936] English AMER INST PHYSICS TRANSPORT SILICON FIELD Observation of gate-controlled spin-orbit interaction using a ferromagnetic detector Article 10.1063/1.3677936 1 JOURNAL OF APPLIED PHYSICS, v.111, no.7 JOURNAL OF APPLIED PHYSICS 111 7 scie scopus 000303282401033 2-s2.0-84861752715 Physics, Applied Physics Article; Proceedings Paper TRANSPORT SILICON FIELD spin-orbit interaction Shubnikov-de Haas oscillation potentiometric measurement Rashba effect HEMT