Jeong, Doo Seok Ahn, Hyung-Woo Kim, Su-Dong An, Myunggi Lee, Suyoun Cheong, Byung-ki 2024-01-20T15:03:22Z 2024-01-20T15:03:22Z 2021-09-05 2012-04 1738-8090 https://pubs.kist.re.kr/handle/201004/129379 A read-out voltage margin of crossbar-array-based passive non-volatile memory employing one threshold switch and one memory switch (resistor) (1TS1R) unit structure was numerically evaluated for the worst-case pattern with respect to the row and column number of a crossbar array. The threshold switching behavior of amorphous GeSe, which has been recently reported by Jeong et al., was taken for the evaluation of the 1S1R crossbar array. The calculation results identified that a pull-up voltage is of importance because of the highly non-linear current-voltage behavior of amorphous GeSe in the high resistance state. English KOREAN INST METALS MATERIALS FILMS MEMORY Numerical Study on Passive Crossbar Arrays Employing Threshold Switches as Cell-Selection-Devices Article 10.1007/s13391-012-2031-0 1 ELECTRONIC MATERIALS LETTERS, v.8, no.2, pp.169 - 174 ELECTRONIC MATERIALS LETTERS 8 2 169 174 scie scopus kci other ART001653246 000303287300012 2-s2.0-84860508244 Materials Science, Multidisciplinary Materials Science Article FILMS MEMORY thresholds switching crossbar arrays chalcogenides memory switching