Seong, Tae-Geun Joung, Mi-Ri Sun, Jong-Woo Yang, Min Kyu Lee, Jeon-Kook Moon, Ji Won Roh, Jaesung Nahm, Sahn 2024-01-20T15:03:51Z 2024-01-20T15:03:51Z 2021-09-04 2012-04 0021-4922 https://pubs.kist.re.kr/handle/201004/129399 Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10(4) s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments. (C) 2012 The Japan Society of Applied Physics English IOP PUBLISHING LTD NIO FILMS OXIDE ELECTRODE Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications Article 10.1143/JJAP.51.041102 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.4 JAPANESE JOURNAL OF APPLIED PHYSICS 51 4 scie scopus 000302413100016 2-s2.0-84860477434 Physics, Applied Physics Article NIO FILMS OXIDE ELECTRODE NIO FILMS OXIDE ELECTRODE