Yoo, Dong Youn Chong, Eugene Kim, Do Hyung Ju, Byeong Kwon Lee, Sang Yeol 2024-01-20T15:04:45Z 2024-01-20T15:04:45Z 2022-01-10 2012-03-01 0040-6090 https://pubs.kist.re.kr/handle/201004/129432 Effect of hygroscopic magnesium oxide (MgO) passivation layer on the stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under positive bias stress and positive bias temperature stress has been investigated. The effect of MgO passivation has been observed by comparing the shift of the positive threshold voltage (V-th) after constant bias temperature stress, which were 8.2 V for the unpassivated TFTs and 1.88 V for the passivated TFTs. In addition, MgO passivated a-IGZO TFTs show also excellent stability under a humidity test since MgO passivation layer can prevent the penetration of water into back channel. In order to investigate the origin of humidity test result, we have measured X-ray photoelectron spectroscopy depth profile of both unpassivated and MgO passivated TFTs with a-IGZO back channel layers after N-2 wet annealing. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TEMPERATURE MGO Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors Article 10.1016/j.tsf.2011.10.065 1 THIN SOLID FILMS, v.520, no.10, pp.3783 - 3786 THIN SOLID FILMS 520 10 3783 3786 scie scopus 000302973400015 2-s2.0-84858341458 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper TEMPERATURE MGO MgO Passivation Stability a-IGZO