Choi, Gyung-Min Min, Byoung-Chul Shin, Kyung-Ho 2024-01-20T15:05:14Z 2024-01-20T15:05:14Z 2021-09-05 2012-03 0018-9464 https://pubs.kist.re.kr/handle/201004/129455 We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co40Fe40B20(0.4 nm)nm/Co72Pt28(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 x 10(6) crg/cm(3) and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Perpendicular Magnetic Tunnel Junctions Having CoFeB/CoPt Alloy Layers Article 10.1109/TMAG.2011.2176744 1 IEEE TRANSACTIONS ON MAGNETICS, v.48, no.3, pp.1130 - 1133 IEEE TRANSACTIONS ON MAGNETICS 48 3 1130 1133 scie scopus 000301199300005 2-s2.0-84858110497 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article FILMS MAGNETORESISTANCE ELECTRODES ANISOTROPY BARRIER DEVICE Magnetic tunnel junctions (MTJs) perpendicular magnetic anisotropy (PMA) tunnel magnetoresistance (TMR)