Mohapatra, Dipti Ranjan Lee, Hak-Joo Sahoo, Subasa Lee, Wook-Seong 2024-01-20T15:05:52Z 2024-01-20T15:05:52Z 2021-09-05 2012-03 1466-8033 https://pubs.kist.re.kr/handle/201004/129484 We report the fabrication of a novel structure of tungsten carbide nanowall on the nanocrystalline diamond substrate by a simple technique. The substrate was exposed to the hydrogen plasma generated in a direct-current plasma chemical vapor deposition system using a pre-carburized tungsten cathode. The physiochemical reaction between the carburized tungsten cathode and hydrogen plasma enabled the growth of tungsten carbide nanowalls at a particular temperature of 600 degrees C, which has never been enabled to date. Scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, and X-ray photo-emission spectroscopy were used to investigate the structure and composition of the samples. It was found that the nanostructure was strongly affected by the substrate/cathode temperatures: the nano-grained, continuous polycrystalline film formed at a higher temperature (800 degrees C) while the discrete tungsten carbide nanowalls formed at a lower temperature (600 degrees C). Such a drastic change in the nanostructure was interpreted in terms of the change in the supersaturation of growth species according to the experimental parameters. English ROYAL SOC CHEMISTRY A novel structure of tungsten carbide nanowalls grown on nanocrystalline diamond film Article 10.1039/c2ce06161a 1 CRYSTENGCOMM, v.14, no.6, pp.2222 - 2228 CRYSTENGCOMM 14 6 2222 2228 N scie scopus 000300443200046 2-s2.0-84863138595 Chemistry, Multidisciplinary Crystallography Chemistry Crystallography Article ELECTRON-ENERGY-LOSS FIELD-EMISSION PROPERTIES CARBON NANOWIRES BEHAVIOR SPECTRA WC nanoflake plasma direct current diamond