Bouzid, Abdessattar Park, Jun-Bum Kim, Se Min Moon, Sung 2024-01-20T15:06:00Z 2024-01-20T15:06:00Z 2021-09-04 2012-03 0021-4922 https://pubs.kist.re.kr/handle/201004/129490 We report a near infrared (NIR) single photon detector (SPD) using an InGaAs/InP avalanche photodiode (APD) operated with a bipolar rectangular gating signal. The use of the bipolar gating pulse enabled us to operate the APD well below the breakdown voltage during the gate-off time. As a result, it permits to decrease the lifetime of the trapped carriers, and then reduces the after-pulse noise of the detector. At a repetition rate of 200 MHz, the after-pulse probability is 8.2% less comparing to that of conventional gating signal SPD. (C) 2012 The Japan Society of Applied Physics English IOP PUBLISHING LTD QUANTUM KEY DISTRIBUTION TELECOM WAVELENGTHS PERFORMANCE Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal Article 10.1143/JJAP.51.034401 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.3 JAPANESE JOURNAL OF APPLIED PHYSICS 51 3 scie scopus 000301348400030 2-s2.0-84863252883 Physics, Applied Physics Article QUANTUM KEY DISTRIBUTION TELECOM WAVELENGTHS PERFORMANCE