Yoon, Sang-Won Seo, Jong-Hyun Seong, Tae-Yeon Yu, Tae Hwan You, Yil Hwan Lee, Kon Bae Kwon, Hoon Ahn, Jae-Pyoung 2024-01-20T15:06:05Z 2024-01-20T15:06:05Z 2021-09-04 2012-03 1528-7483 https://pubs.kist.re.kr/handle/201004/129495 We have investigated the Ga-ordering controlled by structural changes from nanotwin to superlattice in Ga-doped ZnO (GZO) targets for transparent conductive oxides (TCOs) and discussed the distribution effect of Ga atoms on electrical conductivities of GZOs. The nanotwin and superlattice structures were preferentially formed by Ga-doping and sintering at high temperature. The relative fraction of nanotwin increased above transition concentration (TC approximate to 5.6 wt % Ga). Here, we found that Ga atoms at nanotwin are distributed as clustered and disordered states, while they are completely ordered in superlattice. Ultimately, the superlattice leads to high electrical conductivity in GZOs rather than the nanotwin. English American Chemical Society OPTICAL-PROPERTIES TWIN BOUNDARIES DIAMOND-TYPE ZINC-OXIDE FILMS DEPOSITION NANOWIRES Ga Ordering and Electrical Conductivity in Nanotwin and Superlattice-Structured Ga-Doped ZnO Article 10.1021/cg2010908 1 Crystal Growth & Design, v.12, no.3, pp.1167 - 1172 Crystal Growth & Design 12 3 1167 1172 scie scopus 000301098700018 2-s2.0-84863284795 Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary Chemistry Crystallography Materials Science Article OPTICAL-PROPERTIES TWIN BOUNDARIES DIAMOND-TYPE ZINC-OXIDE FILMS DEPOSITION NANOWIRES