Chong, Eugene Park, Ki-Ho Cho, Eun Ah Choi, Jun Young Kim, Bosul You, Dong-Youn Jang, Gun-Eik Lee, Sang Yeol 2024-01-20T15:30:35Z 2024-01-20T15:30:35Z 2021-08-31 2012-03 0167-9317 https://pubs.kist.re.kr/handle/201004/129512 We report on the temperature dependence phenomena in stability and trap related parameters in amorphous-hafnium-indium-zinc-oxide (a-HIZO) thin film transistors (TFTs) with different Hf-ratio. The optimized 7HIZO TFT shows large mu(FE) of > 11.1 cm(2)/V s and good stability based in large falling-rate (R-F) of 0.18 eV/V, trapping-time (tau) of 1.0 x 10(7) s and small subthreshold-swing (SS) of 0.74 V/dec. Relation between thermally activated energy and Hf-ratio clearly indicated Hf acted as carrier suppressors since the increase of Hf-ratio in a-HIZO films. The Hf greatly affected the overall device performance as well as the stability. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER TEMPERATURE PERFORMANCE Correlation between the stability and trap parameters of amorphous oxide thin film transistors Article 10.1016/j.mee.2011.10.006 1 MICROELECTRONIC ENGINEERING, v.91, pp.50 - 53 MICROELECTRONIC ENGINEERING 91 50 53 scie scopus 000300919000009 2-s2.0-83455225823 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article TEMPERATURE PERFORMANCE Thin film transistor Stability Hf-In-Zn-O