Kang, Dae-Hwan Kim, Nan Young Jeong, Hongsik Cheong, Byung-ki 2024-01-20T15:31:28Z 2024-01-20T15:31:28Z 2021-09-05 2012-02-06 0003-6951 https://pubs.kist.re.kr/handle/201004/129550 We experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the set operation in non-volatile phase change memory commences after threshold switching event. It is also shown that the nucleation and growth rates have opposite behaviors with the increase of set operation power: the incubation time in nucleation stage can be minimized at higher power, whereas the percolation time in growth stage is smaller at lower power. Based on these results, we introduce a two-step set pulse of high-power nucleation and low-power growth making the set write operation much faster than conventional simple rectangular or slow-quenched form. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684245] English AMER INST PHYSICS Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory Article 10.1063/1.3684245 1 APPLIED PHYSICS LETTERS, v.100, no.6 APPLIED PHYSICS LETTERS 100 6 scie scopus 000300214000095 2-s2.0-84857213920 Physics, Applied Physics Article phase change memory crystallization set operation