Yoon, Sang-Won Seo, Jong-Hyun Seong, Tae-Yeon Kwon, Hoon Lee, Kon Bae Ahn, Jae-Pyoung 2024-01-20T15:32:56Z 2024-01-20T15:32:56Z 2021-09-04 2012-02 1533-4880 https://pubs.kist.re.kr/handle/201004/129625 The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of cross-sectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport. English AMER SCIENTIFIC PUBLISHERS NANOWIRE FIB Effects of Pt Junction on Electrical Transport of Individual ZnO Nanorod Device Fabricated by Focused Ion Beam Article 10.1166/jnn.2012.4696 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.2, pp.1466 - 1470 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12 2 1466 1470 scie scopus 000303280000117 2-s2.0-84861674693 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper NANOWIRE FIB ZnO Nanorod Electrical Transport FIB