Park, Se Jin Lee, Eunjoo Jeon, Hyo Sang Gwak, Jihye Oh, Min-Kyu Min, Byoung Koun 2024-01-20T15:33:00Z 2024-01-20T15:33:00Z 2021-09-05 2012-01-31 0040-6090 https://pubs.kist.re.kr/handle/201004/129626 The oxidation effects on CuInxGa1-xSeyS2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 degrees C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 degrees C, and the CIGS film synthesized with this optimum oxidation condition exhibited similar to 4% solar cell efficiency at standard irradiation conditions. (C) 2011 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA LOW-COST SOLAR-CELLS NONVACUUM INK Oxidation effects on CuInxGa1-xSeyS2-y thin film growth by solution processes Article 10.1016/j.tsf.2011.10.162 1 THIN SOLID FILMS, v.520, no.7, pp.3048 - 3053 THIN SOLID FILMS 520 7 3048 3053 scie scopus 000301085100116 2-s2.0-84856400158 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article LOW-COST SOLAR-CELLS NONVACUUM INK CuInxGa1-xSeyS2-y Solar cells Thin films Oxidation Air-annealing