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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Nguyen&#x20;Si&#x20;Hieu</dcvalue>
<dcvalue element="contributor" qualifier="author">Lim,&#x20;Jong&#x20;Choo</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Joong&#x20;Kee</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-20T15:33:45Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-20T15:33:45Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2012-01</dcvalue>
<dcvalue element="identifier" qualifier="issn">0167-9317</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;129661</dcvalue>
<dcvalue element="description" qualifier="abstract">A&#x20;Si&#x20;thick&#x20;film&#x20;with&#x20;a&#x20;thickness&#x20;of&#x20;ca.&#x20;2&#x20;mu&#x20;m&#x20;was&#x20;deposited&#x20;on&#x20;a&#x20;copper&#x20;substrate&#x20;by&#x20;electron&#x20;cyclotron&#x20;resonance-chemical&#x20;vapor&#x20;deposition&#x20;(ECR-CVD)&#x20;under&#x20;a&#x20;mixture&#x20;of&#x20;silane&#x20;(SiH(4))&#x20;and&#x20;argon&#x20;(Ar)&#x20;gases.&#x20;The&#x20;surface&#x20;modification&#x20;of&#x20;the&#x20;silicon&#x20;anode&#x20;was&#x20;carried&#x20;out&#x20;by&#x20;the&#x20;metal-assisted&#x20;chemical&#x20;etching&#x20;method.&#x20;Observation&#x20;by&#x20;SEM&#x20;showed&#x20;that&#x20;the&#x20;silicon&#x20;on&#x20;the&#x20;copper&#x20;substrate&#x20;had&#x20;a&#x20;nanorod&#x20;structure&#x20;as&#x20;the&#x20;result&#x20;of&#x20;the&#x20;etching&#x20;process.&#x20;The&#x20;electrochemical&#x20;performance&#x20;of&#x20;the&#x20;anode&#x20;prepared&#x20;using&#x20;the&#x20;free-standing&#x20;Si&#x20;nanorods&#x20;showed&#x20;a&#x20;specific&#x20;capacity&#x20;of&#x20;more&#x20;than&#x20;2000&#x20;mAh&#x2F;g&#x20;with&#x20;84%&#x20;of&#x20;the&#x20;discharge&#x20;capacity&#x20;remaining&#x20;ever&#x20;after&#x20;25&#x20;cycles&#x20;of&#x20;charge&#x20;and&#x20;discharge,&#x20;as&#x20;compared&#x20;with&#x20;35%&#x20;of&#x20;the&#x20;discharge&#x20;capacity&#x20;remaining&#x20;for&#x20;the&#x20;pristine&#x20;Si&#x20;thick&#x20;film.&#x20;(C)&#x20;2011&#x20;Elsevier&#x20;B.V.&#x20;All&#x20;rights&#x20;reserved.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ELSEVIER&#x20;SCIENCE&#x20;BV</dcvalue>
<dcvalue element="subject" qualifier="none">NANOWIRE&#x20;ARRAYS</dcvalue>
<dcvalue element="subject" qualifier="none">LASER-ABLATION</dcvalue>
<dcvalue element="subject" qualifier="none">SI&#x20;NANOWIRES</dcvalue>
<dcvalue element="subject" qualifier="none">FABRICATION</dcvalue>
<dcvalue element="subject" qualifier="none">ELECTRODES</dcvalue>
<dcvalue element="subject" qualifier="none">MECHANISM</dcvalue>
<dcvalue element="title" qualifier="none">Free-standing&#x20;silicon&#x20;nanorods&#x20;on&#x20;copper&#x20;foil&#x20;as&#x20;anode&#x20;for&#x20;lithium-ion&#x20;batteries</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1016&#x2F;j.mee.2011.03.142</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">MICROELECTRONIC&#x20;ENGINEERING,&#x20;v.89,&#x20;pp.138&#x20;-&#x20;140</dcvalue>
<dcvalue element="citation" qualifier="title">MICROELECTRONIC&#x20;ENGINEERING</dcvalue>
<dcvalue element="citation" qualifier="volume">89</dcvalue>
<dcvalue element="citation" qualifier="startPage">138</dcvalue>
<dcvalue element="citation" qualifier="endPage">140</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000299407000034</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-81855213139</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Optics</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Optics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article;&#x20;Proceedings&#x20;Paper</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOWIRE&#x20;ARRAYS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">LASER-ABLATION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SI&#x20;NANOWIRES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FABRICATION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ELECTRODES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MECHANISM</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Lithium-ion&#x20;battery&#x20;anode</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Silicon&#x20;nanorod</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Metal-assisted&#x20;chemical&#x20;etching</dcvalue>
</dublin_core>
