Kim, Yun Hoe Shin, Dong Wook Kim, Jin Sang Song, Jong-Han Yoon, Seok-Jin Park, Kyung Bong Choi, Ji-Won 2024-01-20T15:33:51Z 2024-01-20T15:33:51Z 2021-09-05 2012-01 0272-8842 https://pubs.kist.re.kr/handle/201004/129667 The dielectric properties of composition spread SiO2 Al2O3 thin films deposited by off-axis radio-frequency magnetron sputtering at room temperature were explored to obtain optimized compositions, which have low dielectric constants and losses. The specific points (compositions) showing superior dielectric properties of low dielectric constants (8.13 and 9.12) and losses (tan delta similar to 0.02) at 1 MHz were found in area of the distance of 25.0 mm (Al2Si3O8) and 42 mm (Al2.4Si3O8) apart from SiO2 target side in 75 mm x 25 mm sized Pt/Ti/SiO2/Si(100) substrates, respectively. The specific thin films were amorphous phase and the compositions were Al2Si3O8 (k similar to 8.13) and Al24Si3O8 (k similar to 9.12). (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved. English ELSEVIER SCI LTD FLUORINE Dielectric properties of composition spread SiO2-Al2O3 mixed phase thin films deposited at room temperature by off-axis RF magnetron sputtering Article 10.1016/j.ceramint.2011.04.054 1 CERAMICS INTERNATIONAL, v.38, pp.S79 - S82 CERAMICS INTERNATIONAL 38 S79 S82 scie scopus 000299589800020 2-s2.0-84655169907 Materials Science, Ceramics Materials Science Article; Proceedings Paper FLUORINE Dielectric properties Low dielectric loss Continuous composition spread Off-axis RF magnetron sputtering