Kang, Min-Gyu Oh, Seung-Min Cho, Kwang-Hwan Do, Young-Ho Paik, Dong-Soo Cho, Bong-Hee Kang, Chong-Yun Nahm, Sahn Yoon, Seok-Jin 2024-01-20T15:34:19Z 2024-01-20T15:34:19Z 2021-09-05 2012-01 0013-4651 https://pubs.kist.re.kr/handle/201004/129691 Low-temperature-crystallized PbZr0.52Ti0.48O3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450 degrees C, and remarkable electrical properties such as a remnant polarization of 4.3 mu C/cm(2), a coercive field of 49.3 kV/cm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5% were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.018201jes] English ELECTROCHEMICAL SOC INC Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive Article 10.1149/2.018201jes 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.D9 - D12 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159 1 D9 D12 scie scopus 000298253200031 2-s2.0-84857431755 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article Low-Temperature PZT Vanadium thin film