Oh, Joon-Ho Seong, Tae-Yeon Hong, H. -G. Kim, Kyoung-Kook Yoon, S. -W. Ahn, J. -P. 2024-01-20T16:01:01Z 2024-01-20T16:01:01Z 2021-09-05 2011-12 1385-3449 https://pubs.kist.re.kr/handle/201004/129766 We characterized the electrical and chemical properties of Cu-doped In2O3(CIO) (2.5 nm thick)/Sb-doped SnO2(ATO) (250 nm thick) contacts to p-type GaN by means of current-voltage measurement, scanning transmission electron microscope (STEM) and x-ray photoemission spectroscopy (XPS). The CIO/ATO contacts show ohmic behaviors, when annealed at 530 and 630A degrees C. The effective Schottky barrier heights on diodes made with Ni (5 nm)/Au (5 nm) contacts decrease with increasing annealing temperature. STEM/energy dispersive x-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-Cu-oxide. XPS results show a shift of the surface Fermi level toward the lower binding energy side upon annealing. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. English SPRINGER TRANSPARENT CONDUCTING OXIDE P-TYPE GAN OPTICAL-PROPERTIES FILMS ELECTRODES DEPOSITION RESISTANCE PRESSURE DEVICES OUTPUT Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes Article 10.1007/s10832-011-9653-8 1 JOURNAL OF ELECTROCERAMICS, v.27, no.3-4, pp.109 - 113 JOURNAL OF ELECTROCERAMICS 27 3-4 109 113 scie scopus 000297735400001 2-s2.0-84655161486 Materials Science, Ceramics Materials Science Article TRANSPARENT CONDUCTING OXIDE P-TYPE GAN OPTICAL-PROPERTIES FILMS ELECTRODES DEPOSITION RESISTANCE PRESSURE DEVICES OUTPUT Light emitting diode Transparent electrode SnO2 Ohmic contact