Moon, Seon Young Son, Jun Ho Choi, Kyung Jin Lee, Jong-Lam Jang, Ho Won 2024-01-20T16:01:51Z 2024-01-20T16:01:51Z 2021-09-04 2011-11-14 0003-6951 https://pubs.kist.re.kr/handle/201004/129807 We propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 degrees C, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662421] English AMER INST PHYSICS BAND BENDINGS Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes Article 10.1063/1.3662421 1 APPLIED PHYSICS LETTERS, v.99, no.20 APPLIED PHYSICS LETTERS 99 20 scie scopus 000297786500029 2-s2.0-81855198067 Physics, Applied Physics Article BAND BENDINGS Indium ohmic contact GaN-based vertical light-emitting diodes N-face n-GaN