Kim, Yun Hoe Song, Jong-Han Kim, Jin Sang Yoon, Seok-Jin Park, Kyung Bong Choi, Ji-Won 2024-01-20T16:01:57Z 2024-01-20T16:01:57Z 2021-09-04 2011-11-01 0169-4332 https://pubs.kist.re.kr/handle/201004/129812 The dielectric properties of MgO-Ta2O5 continuous composition spread (CCS) thin films were investigated. The MgO-Ta2O5 CCS thin films were deposited on Pt/Ti/SiO2/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 degrees C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO-Ta2O5 CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta2O5-MgO CCS thin film (post annealed at 350 degrees C) showing superior dielectric properties of high dielectric constant (k similar to 28) and low dielectric loss (tan delta < 0.004) at 1 MHz were found in the area of 3-5 mm apart from Ta2O5 side on the substrate. The cation&apos;s composition of thin film was Mg:Ta = 0.4:2 at%. (C) 2011 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE BV MIM CAPACITORS DENSITY METAL PERFORMANCE ELECTRODE Dielectric properties of continuous composition spreaded MgO-Ta2O5 thin films Article 10.1016/j.apsusc.2011.09.004 1 APPLIED SURFACE SCIENCE, v.258, no.2, pp.843 - 847 APPLIED SURFACE SCIENCE 258 2 843 847 scie scopus 000296525800034 2-s2.0-80054034902 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article MIM CAPACITORS DENSITY METAL PERFORMANCE ELECTRODE High-k Thin films Continuous composition spread RF magnetron sputtering