Park, Youn Ho Koo, Hyun Cheol Chang, Joonyeon Han, Suk-Hee Johnson, Mark 2024-01-20T16:02:50Z 2024-01-20T16:02:50Z 2021-09-04 2011-11 0038-1098 https://pubs.kist.re.kr/handle/201004/129858 A variety of novel experiments involving mesa structures of a two dimensional electron system (2DES) require the fabrication of a metal electrode on top of the mesa. We describe a fabrication process in which the top barrier layer is thinned to achieve low interface resistance, and the effect of the diminished barrier layer on the transport characteristics of carriers in the 2DES is studied. The sample is an InAs inserted heterostructure with strong intrinsic spin-orbit interaction alpha. Shubnikov-de Haas, resistivity and Hall experiments are used to characterize the carrier density, mobility and spin-orbit interaction of the carriers and to compare characteristics with a sample in which the structure is not altered. Our results show that the integrity of the heterostructure and the characteristics of the carriers can be maintained when the thickness of the top barrier is as little as 5 +/- 2 nm. (C) 2011 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD SPIN TRANSPORT INJECTION High mobility in a two dimensional electron system with a thinned barrier Article 10.1016/j.ssc.2011.07.022 1 SOLID STATE COMMUNICATIONS, v.151, no.21, pp.1599 - 1601 SOLID STATE COMMUNICATIONS 151 21 1599 1601 scie scopus 000296306600021 2-s2.0-80053233451 Physics, Condensed Matter Physics Article SPIN TRANSPORT INJECTION Quantum wells Electronic transport Spin-orbit effects