Ha, S. K. Song, J. D. Han, I. K. Ko, D. Y. Kim, S. Y. Lee, E. H. 2024-01-20T16:02:57Z 2024-01-20T16:02:57Z 2021-09-04 2011-11 0374-4884 https://pubs.kist.re.kr/handle/201004/129863 We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature. English KOREAN PHYSICAL SOC DOT LASERS NM WAVELENGTH PERFORMANCE INAS High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy Article 10.3938/jkps.59.3089 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.5, pp.3089 - 3092 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 59 5 3089 3092 scie scopus kci ART001602653 000297038400024 Physics, Multidisciplinary Physics Article DOT LASERS NM WAVELENGTH PERFORMANCE INAS Quantum dots Quantum dashes Laser diodes