Yeo, Inah Song, Jin Dong Lee, Jungil 2024-01-20T16:03:43Z 2024-01-20T16:03:43Z 2021-09-05 2011-10-10 0003-6951 https://pubs.kist.re.kr/handle/201004/129895 We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651492] English AMER INST PHYSICS OPTICAL-PROPERTIES GAAS PHOTOLUMINESCENCE ARSENIDE Temperature-dependent energy band gap variation in self-organized InAs quantum dots Article 10.1063/1.3651492 1 APPLIED PHYSICS LETTERS, v.99, no.15 APPLIED PHYSICS LETTERS 99 15 scie scopus 000295883800028 2-s2.0-80054986155 Physics, Applied Physics Article OPTICAL-PROPERTIES GAAS PHOTOLUMINESCENCE ARSENIDE energy gap gallium arsenide III-V semiconductors indium compounds molecular beam epitaxial growth photoluminescence semiconductor quantum dots