Wu, Zhe Zhang, Gang Park, Youngwook Kang, Stephen D. Lyeo, Ho-Ki Jeong, Doo Seok Jeong, Jeung-hyun No, Kwangsoo Cheong, Byung-ki 2024-01-20T16:03:47Z 2024-01-20T16:03:47Z 2021-09-05 2011-10-03 0003-6951 https://pubs.kist.re.kr/handle/201004/129898 An investigation was conducted to examine the high RESET-current (I-RESET) problem of phase-change memory (PCM) using a fast growth-dominated Ge-doped SbTe (GeST). By examining material and device characteristics of GeST with varying Sb-to-Te ratio from 1.80 to 3.82, the growth rate of crystallization was found to play an important role in determining IRESET and SET speed of the device. Lower IRESET obtained with decreasing Sb-to-Te ratio was ascribed to lower growth rate leading to smaller degree of recrystallization during melt-quenching. With shrinkage of device dimensions, GeST-PCM of a lower Sb-to-Te ratio may become increasingly promising due to its lower IRESET and scaled SET speed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3641470] English AMER INST PHYSICS Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe Article 10.1063/1.3641470 1 APPLIED PHYSICS LETTERS, v.99, no.14 APPLIED PHYSICS LETTERS 99 14 scie scopus 000295625100103 2-s2.0-80053971379 Physics, Applied Physics Article antimony alloys crystal growth from melt germanium phase change memories recrystallisation