Kim, Byung-Hyun Pamungkas, Mauludi Ariesto Park, Mina Kim, Gyubong Lee, Kwang-Ryeol Chung, Yong-Chae 2024-01-20T16:03:48Z 2024-01-20T16:03:48Z 2021-09-04 2011-10-03 0003-6951 https://pubs.kist.re.kr/handle/201004/129899 Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs. (C) 2011 American Institute of Physics. [doi:10,1063/1.3643038] English AMER INST PHYSICS SELF-LIMITING OXIDATION SI NANOWIRES PARTICLES Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime Article 10.1063/1.3643038 1 APPLIED PHYSICS LETTERS, v.99, no.14 APPLIED PHYSICS LETTERS 99 14 scie scopus 000295625100081 2-s2.0-80053988759 Physics, Applied Physics Article SELF-LIMITING OXIDATION SI NANOWIRES PARTICLES compressive strength deformation elemental semiconductors internal stresses molecular dynamics method nanowires oxidation shear modulus silicon